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Issue 16, 2015
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Fabrication of MoS2 thin film transistors via selective-area solution deposition methods

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Abstract

We report a simple and selective solution method to prepare Molybdenum Disulfide (MoS2) thin films for functional thin film transistors (TFTs). The selective area solution-processed MoS2 grows on top and around the gold (Au) source and drain electrodes and in the channel area of the TFT. MoS2 thicknesses in the channel area are in the order of 11 nm. A mechanism for the selective growth is also proposed. The Au electrodes act not only as contact, but also as a catalytic surface for the hydrazine hydrate used in the reaction, which induces the selective growth of MoS2 on the Au surface and into the channel region. This one step process demonstrates functional TFTs with a carrier mobility of ∼0.4 cm2 V−1 s−1.

Graphical abstract: Fabrication of MoS2 thin film transistors via selective-area solution deposition methods

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Publication details

The article was received on 09 Jan 2015, accepted on 10 Mar 2015 and first published on 11 Mar 2015


Article type: Communication
DOI: 10.1039/C5TC00062A
Citation: J. Mater. Chem. C, 2015,3, 3842-3847
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    Fabrication of MoS2 thin film transistors via selective-area solution deposition methods

    Y. Xi, M. I. Serna, L. Cheng, Y. Gao, M. Baniasadi, R. Rodriguez-Davila, J. Kim, M. A. Quevedo-Lopez and M. Minary-Jolandan, J. Mater. Chem. C, 2015, 3, 3842
    DOI: 10.1039/C5TC00062A

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