Core–shell CdS:Ga–ZnTe:Sb p–n nano-heterojunctions: fabrication and optoelectronic characteristics

Abstract

In this study, we reported on the construction of p–n junctions based on crystalline Ga-doped CdS–polycrystalline ZnTe nanostructures (NSs) for optoelectronic device application. The coaxial nano-heterojunction was fabricated by a two-step growth method. It is found that the absorption edge of CdS:Ga–ZnTe:Sb core–shell NSs red shifted to about 580 nm, compared with CdS nanowires (520 nm). The as-fabricated core–shell p–n junction exhibited obvious rectification characteristics with a low turn-on voltage of ∼0.25 V. What is more, it showed stable and repeatable photoresponse to 638 nm light illumination, with a responsivity and a detectivity of 1.55 × 10³ A W⁻¹ and 8.7 × 10¹³ cm Hz^1/2 W⁻¹, respectively, much higher than other photodetectors with similar device configurations. The generality of this study suggests that the present coaxial CdS:Ga–ZnTe:Sb core–shell nano-heterojunction will have great potential applications in future nano-optoelectronic devices.