Room temperature ferromagnetism in (Ga1−xMnx)2O3 epitaxial thin films

Daoyou Guo; Zhenping Wu; Yuehua An; Xiaojiang Li; Xuncai Guo; Xulong Chu; Changlong Sun; Ming Lei; Linghong Li; Lixin Cao; Peigang Li; Weihua Tang

doi:10.1039/C4TC02833C

Room temperature ferromagnetism in (Ga_1−xMn_x)₂O₃ epitaxial thin films

Daoyou Guo,^ab Zhenping Wu,^ab Yuehua An,^ab Xiaojiang Li,^e Xuncai Guo,^ab Xulong Chu,^ab Changlong Sun,^ab Ming Lei,^ab Linghong Li,^f Lixin Cao,^d Peigang Li*^ac and Weihua Tang*^ab

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* Corresponding authors

^a School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China
E-mail: whtang@bupt.edu.cn

^b State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China

^c Center for Optoelectronics Materials and Devices, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, Zhejiang, China
E-mail: pgli@zstu.edu.cn

^d Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Science, Beijing 100190, China

^e State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

^f Department of Physics, The State University of New York at Potsdam, Potsdam, New York 13676-2294, USA

Abstract

Mn-doped monoclinic β-(Ga_1−xMn_x)₂O₃ thin films were epitaxially grown on α-Al₂O₃ (0001) substrates by alternately depositing Ga₂O₃ and Mn layers using the laser molecular beam epitaxy technique. The crystal lattice expands and the energy band gap shrinks with the increase of Mn content for Mn ions incorporated into the Ga site. Ferromagnetism appears even above room temperature when x ≥ 0.11 and can be remarkably enhanced with the continuous increase of Mn indicated by the increased magnetization and coercivity. This study presents a promising candidate for use in spintronic devices that are capable of working at room temperature.

Journal of Materials Chemistry C

Room temperature ferromagnetism in (Ga_1−xMn_x)₂O₃ epitaxial thin films

Abstract

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Room temperature ferromagnetism in (Ga_1−xMn_x)₂O₃ epitaxial thin films

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