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Issue 1, 2015
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Thienoisoindigo-based copolymer with fused thieno[3,2-b]thiophene as a donor in thin film transistor applications with high performance

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Abstract

A new thienoisoindigo (TIG)-based copolymer with thieno[3,2-b]thiophene as a donor is synthesized. The copolymer with a short π–π stacking distance of 3.43 Å exhibits an excellent hole mobility up to 0.69 cm2 V−1 s−1 under optimum conditions. This performance is the record value among reported TIG-based transistors.

Graphical abstract: Thienoisoindigo-based copolymer with fused thieno[3,2-b]thiophene as a donor in thin film transistor applications with high performance

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Publication details

The article was received on 17 Oct 2014, accepted on 02 Nov 2014 and first published on 05 Nov 2014


Article type: Communication
DOI: 10.1039/C4TC02355B
J. Mater. Chem. C, 2015,3, 33-36

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    Thienoisoindigo-based copolymer with fused thieno[3,2-b]thiophene as a donor in thin film transistor applications with high performance

    C. Chen, S. Sharma, Y. Li, J. Lee and S. Chen, J. Mater. Chem. C, 2015, 3, 33
    DOI: 10.1039/C4TC02355B

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