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Issue 1, 2015
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Nondoped deep-blue spirofluorenexanthene-based green organic semiconductors (GOS) via a pot, atom and step economic (PASE) route combining direct arylation with tandem reaction

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Abstract

Effective synthesis of organic semiconductors with pot, atom, and step economic (PASE) methods will be an indispensable part of green electronics. In this paper, we combined direct arylation with one-pot/tandem reaction to synthesize a green organic semiconductor (GOS), di(spiro[fluorene-9,9′-xanthene]-2-yl)-1,2,4,5-tetrafluorobenzene (DSFX-TFB), serving as the emitting layer for organic light-emitting devices (OLEDs). The maximum current efficiency (CE) of 3.2 cd A−1, power efficiency (PE) of 2.0 lm W−1 and external quantum efficiency (EQE) of 4.1% were obtained with the CIE coordinates (0.15, 0.08) in the nondoped deep-blue OLEDs. Meanwhile, good energy transfer and device performances with maximum CE of 8.03 cd A−1 and PE of 4.62 lm W−1 were achieved in typical sky-blue fluorescent OLEDs using DSFX-TFB as host and p-bis(p-N,N-diphenyl-aminostyryl)benzene (DSA-Ph) as dopant material. This work provides a PASE synthetic route for GOSs and eco-friendly materials.

Graphical abstract: Nondoped deep-blue spirofluorenexanthene-based green organic semiconductors (GOS) via a pot, atom and step economic (PASE) route combining direct arylation with tandem reaction

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Publication details

The article was received on 02 Sep 2014, accepted on 22 Oct 2014 and first published on 23 Oct 2014


Article type: Paper
DOI: 10.1039/C4TC01963F
J. Mater. Chem. C, 2015,3, 94-99

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    Nondoped deep-blue spirofluorenexanthene-based green organic semiconductors (GOS) via a pot, atom and step economic (PASE) route combining direct arylation with tandem reaction

    M. Sun, W. Zhu, Z. Zhang, C. Ou, L. Xie, Y. Yang, Y. Qian, Y. Zhao and W. Huang, J. Mater. Chem. C, 2015, 3, 94
    DOI: 10.1039/C4TC01963F

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