We report a hybrid nano-lithographic approach to minimizing the effects of line-edge roughness and shot noise in nano-hole patterning. Photoresist polymers were reflowed around nanoparticles deposited by self-assembly and simple etch chemistry. The method extends the transistor contact hole patterning limits to <20 nm.
M. K. Morakinyo and S. B. Rananavare, J. Mater. Chem. C, 2015, 3, 955 DOI: 10.1039/C4TC01339E
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