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Issue 32, 2014
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Construction of crossed heterojunctions from p-ZnTe and n-CdSe nanoribbons and their photoresponse properties

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Abstract

Sb-doped p-type ZnTe nanoribbons (NRs) and Ga-doped n-type CdSe NRs were synthesized via a co-thermal evaporation method in a horizontal tube furnace, respectively. Crossbar heterojunction diode (HD) devices were constructed from p-ZnTe:Sb NRs and n-CdSe NRs by a convenient route. The p-ZnTe/n-CdSe NR HD device exhibits a significant rectification characteristic with a rectification ratio up to 103 within ±5 V and a low turn-on voltage of 2.6 V. Photoresponse analysis reveals that such HD devices were highly sensitive to light illumination with excellent stability, reproducibility and fast response speeds of 37/118 μs at reverse bias voltage. It is expected that such HD devices will have great potential applications in electronic and optoelectronic devices in the future.

Graphical abstract: Construction of crossed heterojunctions from p-ZnTe and n-CdSe nanoribbons and their photoresponse properties

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Publication details

The article was received on 18 May 2014, accepted on 10 Jun 2014 and first published on 12 Jun 2014


Article type: Paper
DOI: 10.1039/C4TC01034E
J. Mater. Chem. C, 2014,2, 6547-6553

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    Construction of crossed heterojunctions from p-ZnTe and n-CdSe nanoribbons and their photoresponse properties

    D. Wu, Y. Jiang, X. Yao, Y. Chang, Y. Zhang, Y. Yu, Z. Zhu, Y. Zhang, X. Lan and H. Zhong, J. Mater. Chem. C, 2014, 2, 6547
    DOI: 10.1039/C4TC01034E

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