Flexible photodetectors with single-crystalline GaTe nanowires†
GaTe is an important layer-structured III–VI compound semiconductor with superior optical and electrical properties. In this paper, single-crystalline gallium telluride nanowires were successfully synthesized via a conventional chemical vapor deposition method. Single nanowire field-effect transistors revealed typical p-type semiconductor behavior of the GaTe nanowires, which showed substantial response to light irradiation with broad wavelengths ranging from 350 to 800 nm. Flexible photodetectors on a PET substrate were also fabricated with a high responsivity and an external quantum efficiency of 20.75 A W−1 and 3.96 × 103%, respectively. Besides, the flexible photodetectors showed excellent mechanical flexibility and stable electrical properties under different bending states, revealing promising applications in future flexible optoelectronic devices.