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Issue 30, 2014
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Flexible photodetectors with single-crystalline GaTe nanowires

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Abstract

GaTe is an important layer-structured III–VI compound semiconductor with superior optical and electrical properties. In this paper, single-crystalline gallium telluride nanowires were successfully synthesized via a conventional chemical vapor deposition method. Single nanowire field-effect transistors revealed typical p-type semiconductor behavior of the GaTe nanowires, which showed substantial response to light irradiation with broad wavelengths ranging from 350 to 800 nm. Flexible photodetectors on a PET substrate were also fabricated with a high responsivity and an external quantum efficiency of 20.75 A W−1 and 3.96 × 103%, respectively. Besides, the flexible photodetectors showed excellent mechanical flexibility and stable electrical properties under different bending states, revealing promising applications in future flexible optoelectronic devices.

Graphical abstract: Flexible photodetectors with single-crystalline GaTe nanowires

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Publication details

The article was received on 05 May 2014, accepted on 31 May 2014 and first published on 03 Jun 2014


Article type: Paper
DOI: 10.1039/C4TC00917G
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J. Mater. Chem. C, 2014,2, 6104-6110

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    Flexible photodetectors with single-crystalline GaTe nanowires

    G. Yu, Z. Liu, X. Xie, X. Ouyang and G. Shen, J. Mater. Chem. C, 2014, 2, 6104
    DOI: 10.1039/C4TC00917G

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