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Issue 32, 2014
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High-performance ultralow dielectric constant carbon-bridged mesoporous organosilica films for advanced interconnects

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Abstract

Mesoporous organosilica (MO) films are prepared using precursor 1,2-bis(triethoxysilyl)ethane (BTEE) and porogen template poly(ethylene oxide)–poly(propylene oxide)–poly(ethylene oxide) (P123). The effects of annealing temperature, P123/BTEE molar ratio, and moisture adsorption on the characteristics of the MO films are investigated. It is indicated that MO films prepared at a P123/BTEE molar ratio of 0.016 display the lowest dielectric constant (κ) of 1.80, a small dissipation factor of 0.0068 at 100 kHz, an extremely low leakage current density of 2.01 × 10−9 A cm−2 at 0.5 MV cm−1, a modulus (E) of 6.27 GPa, and a hardness (H) of 0.58 GPa. Following moisture adsorption, the κ value increases by ∼12%. However, ultraviolet treatment significantly reduces the extent of increase of the κ value to 4%. The films maintain an ultralow κ value of ∼2.0 and a very low leakage current density of 1.7 × 10−9 A cm−2 at 0.5 MV cm−1. Following annealing at 500 °C, the superior performance of the MO films is demonstrated by their κ value of ∼1.92, leakage current density of 7.08 × 10−9 at 0.5 MV cm−1, and improved E of ∼9.1 GPa and H of ∼0.8 GPa. Such MO films are very promising for advanced interlevel insulators.

Graphical abstract: High-performance ultralow dielectric constant carbon-bridged mesoporous organosilica films for advanced interconnects

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Publication details

The article was received on 02 May 2014, accepted on 01 Jun 2014 and first published on 04 Jun 2014


Article type: Paper
DOI: 10.1039/C4TC00901K
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Citation: J. Mater. Chem. C, 2014,2, 6502-6510

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    High-performance ultralow dielectric constant carbon-bridged mesoporous organosilica films for advanced interconnects

    T. Jiang, B. Zhu, S. Ding, Z. Fan and D. W. Zhang, J. Mater. Chem. C, 2014, 2, 6502
    DOI: 10.1039/C4TC00901K

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