A colossal dielectric constant of an amorphous TiO2:(Nb, In) film with low loss fabrication at room temperature

Abstract

High-performance dielectric materials continue to arouse considerable interest due to their application in the field of solid state capacitors. In, Nb co-doped TiO₂ thin films with the composition of (In_0.5Nb_0.5)_xTi_1−xO₂ (x = 0.10) were fabricated on a Pt substrate by pulsed laser ablation at room temperature. In addition to their colossal permittivity (ε_r > 4000), they exhibit correspondingly a low dielectric loss (about 5.5%) and high frequency-stability (up to 10 MHz), making the film suitable for myriad device miniaturization and high-energy-density storage applications. The preparation of this amorphous CP TiO₂ film at room temperature possesses great significance in microelectronic packaging not only because the CP film can be prepared on any kind of substrate including plastic or paper but also because the low temperature can protect the preparation of microelectronic devices. The procedure without annealing is simple and easy to operate, which will raise the efficiency and reduce the production cost in the semiconductor industry. As remarked above, In, Nb co-doped amorphous TiO₂ films with colossal permittivity would be a highly attractive proposition.