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Issue 20, 2014
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An organic microcrystal array-embedded layer: highly directional alternating p- and n-channels for ambipolar transistors and inverters

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Abstract

An organic microcrystal array-embedded active layer for highly directional alternate p- and n-channels is prepared for fabricating a high-performance ambipolar organic field-effect transistor (OFET) and complementary inverter by successive deposition of p- and n-channel organic semiconductors on a polymeric gate dielectric. First, a microcrystal array of 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene, p-channel) is directly grown over the gate dielectric, and then a copper hexadecafluorophthalocyanine (F16CuPc) layer is formed by a thermal evaporation method, resulting in the formation of an organic microcrystal array-embedded active layer with highly directional alternating n- and p-channels between the source and drain electrodes. Devices based on this active layer exhibited clear ambipolar charge transport characteristics with high ambipolarity (>90%). The ambipolar charge transport mechanism is discussed in detail. In addition, air-stable complementary inverters comprising two ambipolar OFETs are also demonstrated.

Graphical abstract: An organic microcrystal array-embedded layer: highly directional alternating p- and n-channels for ambipolar transistors and inverters

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Publication details

The article was received on 08 Jan 2014, accepted on 23 Feb 2014 and first published on 25 Feb 2014


Article type: Paper
DOI: 10.1039/C4TC00042K
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J. Mater. Chem. C, 2014,2, 3980-3987

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    An organic microcrystal array-embedded layer: highly directional alternating p- and n-channels for ambipolar transistors and inverters

    M. Jea, A. Kumar, H. Cho, D. Yang, H. Shim, A. K. Palai and S. Pyo, J. Mater. Chem. C, 2014, 2, 3980
    DOI: 10.1039/C4TC00042K

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