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Issue 24, 2014
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Fabrication of free-standing Al2O3 nanosheets for high mobility flexible graphene field effect transistors

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Abstract

We propose a facile methodology for large-scale fabrication of graphene-based field effect transistors (GFETs) with two types of devices, top- and bottom-gated configurations. The top-gated GFETs containing a monolayer graphene channel, a free-standing Al2O3 nanosheet as the gate dielectrics and a top-gate electrode were assembled by a poly(methyl methacrylate)-assisted wet-transfer technique. As a result, the hole mobility of the top-gated GFETs was 2306.28 ± 295.53 cm2 V−1 s−1, which is much higher than that of top-gated GFETs with Al2O3 dielectrics prepared by atomic layer deposition (15.28 cm2 V−1 s−1). We also simultaneously synthesized graphene–graphite integrated electronic devices, in which we utilized graphene and graphite layers as an active channel layer and source/drain electrodes for bottom-gated all-graphene-based FETs, respectively. In addition, a layer-by-layer stacked multilayer graphene sheet and free-standing Al2O3 dielectrics were employed as a gate electrode and a dielectric layer, respectively. Significantly, all component layers were assembled by a poly(methyl methacrylate)-assisted wet-transfer technique, which is a progression towards high-performance, transparent, and flexible GFETs.

Graphical abstract: Fabrication of free-standing Al2O3 nanosheets for high mobility flexible graphene field effect transistors

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Supplementary files

Article information


Submitted
08 Jan 2014
Accepted
19 Mar 2014
First published
19 Mar 2014

J. Mater. Chem. C, 2014,2, 4759-4763
Article type
Paper

Fabrication of free-standing Al2O3 nanosheets for high mobility flexible graphene field effect transistors

M. W. Jung, W. Song, W. J. Choi, D. S. Jung, Y. J. Chung, S. Myung, S. S. Lee, J. Lim, C. Park, Jeong-O. Lee and K. An, J. Mater. Chem. C, 2014, 2, 4759
DOI: 10.1039/C4TC00041B

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