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Issue 16, 2014
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Ambipolar charge-transport property for the D–A complex with naphthalene diimide motif

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Abstract

A new naphthalene diimide (NDI) derivative 4NH2-NDI was synthesized and investigated. The introduction of four amino groups at core position endows 4NH2-NDI with a high HOMO energy (−4.87 eV). The organic field effect transistor (OFET) results reveal that 4NH2-NDI behaves as a p-type semiconductor with a rather low hole mobility of 8.2 × 10−5 cm2 V−1 s−1. However, its hole mobility can be enhanced significantly after doping with N,N-dihexyl naphthalene diimide (DHNDI). More interestingly, the blend thin films of 4NH2-NDI and DHNDI exhibit ambipolar behavior based on the respective transfer and output characteristics measured in an inert atmosphere, and hole and electron mobilities can reach 0.01 cm2 V−1 s−1 and 0.001 cm2 V−1 s−1, respectively, when the molar ratio of 4NH2-NDI and DHNDI is 1 : 3.

Graphical abstract: Ambipolar charge-transport property for the D–A complex with naphthalene diimide motif

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Publication details

The article was received on 01 Dec 2013, accepted on 18 Jan 2014 and first published on 21 Jan 2014


Article type: Paper
DOI: 10.1039/C3TC32377C
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Citation: J. Mater. Chem. C, 2014,2, 2869-2876

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    Ambipolar charge-transport property for the D–A complex with naphthalene diimide motif

    X. Chen, G. Zhang, H. Luo, Y. Li, Z. Liu and D. Zhang, J. Mater. Chem. C, 2014, 2, 2869
    DOI: 10.1039/C3TC32377C

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