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Issue 7, 2014
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Fabrication of ultra-flexible, ultra-thin organic field-effect transistors and circuits by a peeling-off method

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Abstract

We present a new and simple way of fabricating ultra-thin and flexible organic field-effect transistors and circuits by directly peeling them off from conventional SiO2 substrates. The devices show excellent flexibility up to a bending radius of 1 mm. Free-standing OFETs as thin as about 600 nm can also be made in this way. In addition, flexible complementary inverters with a gain of 100 can be fabricated by the peeling-off method.

Graphical abstract: Fabrication of ultra-flexible, ultra-thin organic field-effect transistors and circuits by a peeling-off method

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Article information


Submitted
22 Sep 2013
Accepted
31 Oct 2013
First published
04 Nov 2013

J. Mater. Chem. C, 2014,2, 1260-1263
Article type
Communication

Fabrication of ultra-flexible, ultra-thin organic field-effect transistors and circuits by a peeling-off method

Y. Hu, C. Warwick, A. Sou, L. Jiang and H. Sirringhaus, J. Mater. Chem. C, 2014, 2, 1260
DOI: 10.1039/C3TC31869A

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