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Issue 12, 2014
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Towards novel non-chemically amplified (n-CARS) negative resists for electron beam lithography applications

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Abstract

A novel, non-chemically amplified negative resist was synthesized and characterized for next generation lithography applications. This resist material was shown to be directly sensitive to radiation without utilizing the concept of chemical amplification (CAR) and resulted in high-resolution 20 nm features. This resist design is accomplished by copolymers that are prepared from a monomer containing a sulfonium group which is sensitive to e-beam irradiation. Under 20 keV e-beam imaging and TMAH development, a sensitivity of 2.06 μC cm−2 and contrast of 1.8 were obtained. It has an LER of 20 nm, 10 line pattern varies from 1.8 ± 0.3 to 2.3 ± 0.4 nm.

Graphical abstract: Towards novel non-chemically amplified (n-CARS) negative resists for electron beam lithography applications

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Publication details

The article was received on 14 Sep 2013, accepted on 30 Dec 2013 and first published on 06 Jan 2014


Article type: Communication
DOI: 10.1039/C3TC31826E
J. Mater. Chem. C, 2014,2, 2118-2122

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    Towards novel non-chemically amplified (n-CARS) negative resists for electron beam lithography applications

    V. Singh, V. S. V. Satyanarayana, S. K. Sharma, S. Ghosh and K. E. Gonsalves, J. Mater. Chem. C, 2014, 2, 2118
    DOI: 10.1039/C3TC31826E

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