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Issue 7, 2014
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High performance rigid and flexible visible-light photodetectors based on aligned X(In, Ga)P nanowire arrays

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Abstract

InP and GaP nanowires (NWs) were synthesized via a simple thermal evaporation method for applications as high performance visible-light photodetectors. Individual InP NW field-effect transistors (FETs) were fabricated to study their electronic transport and photoresponse characteristics, which exhibited typical n-type transistor characteristics with an efficient electron mobility of 1.21 cm2 V−1 s−1, a fast response time (∼0.1 s) and good sensitivity with a spectral responsivity of 779.14 A W−1 and a high quantum efficiency of 1.53 × 105% to visible light irradiation. Using the contact printing process, large scale aligned InP NW arrays were assembled on both rigid SiO2/Si and flexible PET substrates. Both rigid and flexible InP NW array based photodetectors demonstrated excellent photoresponse performance, especially a faster response, for example, from 0.1 s to 80 ms. In addition, the flexible InP NW array based photodetectors exhibited good flexibility, good folding endurance and electrical stability. Using similar processes, aligned GaP NW array based photodetectors were also fabricated on SiO2/Si and PET substrates, which also exhibited fast, reversible, and stable photoresponse properties. These merits demonstrate that the as-prepared InP and GaP NWs are good candidates with substantial potential for future electronic and optoelectronic nanodevice applications.

Graphical abstract: High performance rigid and flexible visible-light photodetectors based on aligned X(In, Ga)P nanowire arrays

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Supplementary files

Article information


Submitted
02 Aug 2013
Accepted
29 Aug 2013
First published
30 Aug 2013

J. Mater. Chem. C, 2014,2, 1270-1277
Article type
Paper

High performance rigid and flexible visible-light photodetectors based on aligned X(In, Ga)P nanowire arrays

G. Chen, B. Liang, Z. Liu, G. Yu, X. Xie, T. Luo, Z. Xie, D. Chen, M. Zhu and G. Shen, J. Mater. Chem. C, 2014, 2, 1270
DOI: 10.1039/C3TC31507J

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