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Issue 36, 2013
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Graphene electrodes transfer-printed with a surface energy-mediated wet PDMS stamp: impact of Au doped-graphene for high performance soluble oxide thin-film transistors

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Abstract

Unlike conventional dry stamp-based printing methodologies, the suggested wet PDMS stamping technique allows for the generation of well-patterned graphene source/drain electrode structures. It is clarified that the electrical characteristics of soluble In–Ga–Zn–O (IGZO) TFTs can be improved effectively by adjusting the work function of transfer-printed graphene electrodes with a simple, facile Au doping technique. By implementing the transfer-printed, Au-doped graphene layers as a source/drain electrode and the newly developed chemical structure-tailored IGZO semiconductors as a soluble channel layer, the high performance graphene/IGZO TFTs are demonstrated with a field-effect mobility of 3.2 cm2 V−1 s−1, which is far superior to the previously reported TFTs employing the printable electrode and a soluble oxide semiconductor.

Graphical abstract: Graphene electrodes transfer-printed with a surface energy-mediated wet PDMS stamp: impact of Au doped-graphene for high performance soluble oxide thin-film transistors

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Publication details

The article was received on 08 Jul 2013, accepted on 25 Jul 2013 and first published on 26 Jul 2013


Article type: Communication
DOI: 10.1039/C3TC31292E
Citation: J. Mater. Chem. C, 2013,1, 5632-5637

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    Graphene electrodes transfer-printed with a surface energy-mediated wet PDMS stamp: impact of Au doped-graphene for high performance soluble oxide thin-film transistors

    S. Jeong, M. Jung, J. Lee, H. Kim, J. Lim, K. An, Y. Choi and S. S. Lee, J. Mater. Chem. C, 2013, 1, 5632
    DOI: 10.1039/C3TC31292E

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