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Issue 36, 2013
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Proton conducting zeolite films for low-voltage oxide-based electric-double-layer thin-film transistors and logic gates

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Abstract

Three-dimensional nanoporous zeolite films with Linde Type A (LTA) structure prepared by a seeding-free synthesis strategy exhibited high room-temperature proton conductivity and large electric-double-layer (EDL) capacitance. In-plane-gate indium-zinc-oxide thin-film transistors gated by such proton conducting zeolite LTA films were fabricated by a simple self-assembled method. Due to the strong EDL capacitive coupling triggered by mobile protons in zeolite LTA, such transistors showed a low-voltage operation of 1.5 V and a high performance with a large field-effect mobility of 13 cm2 Vāˆ’1 sāˆ’1 and a small subthreshold swing of 95 mV per decade. Furthermore, AND logic operation was also experimentally demonstrated on the dual in-plane-gate EDL transistors. Our results strongly indicate that zeolite LTA films are promising gate dielectric candidates for application in low-voltage and low-cost electronics, which greatly expands the application areas of zeolites.

Graphical abstract: Proton conducting zeolite films for low-voltage oxide-based electric-double-layer thin-film transistors and logic gates

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Publication details

The article was received on 27 Jun 2013, accepted on 16 Jul 2013 and first published on 17 Jul 2013


Article type: Paper
DOI: 10.1039/C3TC31236D
J. Mater. Chem. C, 2013,1, 5669-5674

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    Proton conducting zeolite films for low-voltage oxide-based electric-double-layer thin-film transistors and logic gates

    G. Wu, H. Zhang, J. Zhou, A. Huang and Q. Wan, J. Mater. Chem. C, 2013, 1, 5669
    DOI: 10.1039/C3TC31236D

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