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Issue 46, 2013
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Nanofabrication of TaS2 conducting layers nanopatterned with Ta2O5 insulating regions via AFM

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Abstract

It is demonstrated how local oxidation nanolithography performed with an atomic force microscope (AFM-LON) may be successfully employed for the nanopatterning of insulating regions of Ta2O5 on TaS2 ultrathin metallic layers. This provides a simple approach for the fabrication of electronic devices, such as single-electron transistors, at the nanoscale.

Graphical abstract: Nanofabrication of TaS2 conducting layers nanopatterned with Ta2O5 insulating regions via AFM

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Publication details

The article was received on 31 May 2013, accepted on 18 Jul 2013 and first published on 18 Jul 2013


Article type: Communication
DOI: 10.1039/C3TC31041H
Citation: J. Mater. Chem. C, 2013,1, 7692-7694

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    Nanofabrication of TaS2 conducting layers nanopatterned with Ta2O5 insulating regions via AFM

    E. Coronado, A. Forment-Aliaga, E. Navarro-Moratalla, E. Pinilla-Cienfuegos and A. Castellanos-Gomez, J. Mater. Chem. C, 2013, 1, 7692
    DOI: 10.1039/C3TC31041H

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