High-performance low-voltage organic transistor memories with room-temperature solution-processed hybrid nanolayer dielectrics

Abstract

A gold nanoparticle enhanced organic transistor non-volatile memory (ONVM) operated at ultralow voltages of up to −1 V has been achieved by facile room-temperature solution-processed hybrid nanolayer dielectrics. The amorphous ZrTiO_x nanolayer dielectrics exhibit a high-k value of 18.9 and a high capacitance of 705 nF cm⁻². With the modification of the octadecylphosphonic acid (ODPA) monolayer, the a-ZrTiO_x/ODPA hybrid nanolayer dielectrics exhibit a high capacitance of 514 nF cm⁻² and a very low leakage current density of 2 × 10⁻⁷ A cm⁻². The pentacene transistor-based ONVMs with the a-ZrTiO_x/ODPA hybrid nanolayer dielectrics could be operated in operating voltages as low as −1 V. With ultralow operating voltages, ONVMs show high performances, such as high hole mobility (0.3 cm² V⁻¹ s⁻¹), large memory window (1.5 V), and long charge retention time (4 × 10⁴ s) directly in ambient air. Our results suggest the great potential of low-temperature solution-processed hybrid nanolayer dielectrics for the realization of low-power and high-performance organic electronic devices.