Synthesis and morphology transformation of single-crystal graphene domains based on activated carbon dioxide by chemical vapor deposition

Abstract

Uniform single-crystal graphene domains were synthesized on copper foils by atmospheric pressure chemical vapor deposition with activated carbon dioxide (CO₂). Controlled growth of graphene domains with a shape evolution from hexagonal to round has been achieved by varying the flow rate of CO₂. The excess CO₂ passivation induced graphene domain morphology transformation was systematically studied. Field-effect transistors were fabricated based on our CO₂-derived graphene and their electrical properties were measured both in air and N₂. The maximum fitted device mobilities for holes and electrons could achieve up to 3010 and 750 cm² V⁻¹ s⁻¹, respectively. Our method provides a viable way for the industrial application of graphene derived from CO₂ which could be converted to carbon materials.