Issue 7, 2013

Ultrasensitive non-chemically amplified low-contrast negative electron beam lithography resist with dual-tone behaviour

Abstract

A non-chemically amplified negative-tone electron-beam resist with an extremely high sensitivity is presented in this work. The resist, poly(2-hydroxyethyl methacrylate-co-2-methacrylamidoethyl methacrylate) (P(HEMA-co-MAAEMA)), has been synthesized using free radical polymerization of 2-hydroxyethyl methacrylate and 2-aminoethyl methacrylate, and exhibits a crosslinking threshold dose as low as 0.5 μC cm−2. Exposed resist patterns show good adherence to silicon substrates without the assistance of adhesion promoters or thermal treatments and are shown to be adequate for use as a mask for both wet and dry etching of Si. A low contrast value of 1.2 has been measured, indicating that the synthesized polymeric mixture is particularly suitable for achieving grey (3D) lithography. Other relevant properties of the new e-beam resist are optical transparency, visible photoluminescence when crosslinked at low electronic doses, and dose-dependent dual-tone behaviour.

Graphical abstract: Ultrasensitive non-chemically amplified low-contrast negative electron beam lithography resist with dual-tone behaviour

Article information

Article type
Paper
Submitted
07 Sep 2012
Accepted
09 Dec 2012
First published
07 Jan 2013

J. Mater. Chem. C, 2013,1, 1392-1398

Ultrasensitive non-chemically amplified low-contrast negative electron beam lithography resist with dual-tone behaviour

V. Canalejas-Tejero, S. Carrasco, F. Navarro-Villoslada, J. L. García Fierro, M. D. C. Capel-Sánchez, M. C. Moreno-Bondi and C. A. Barrios, J. Mater. Chem. C, 2013, 1, 1392 DOI: 10.1039/C2TC00148A

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements