Correction: Aliovalent A-site engineered AgNbO3 lead-free antiferroelectric ceramics toward superior energy storage density

Nengneng Luo; Kai Han; Fangping Zhuo; Chao Xu; Guangzu Zhang; Laijun Liu; Xiyong Chen; Changzheng Hu; Huanfu Zhou; Yuezhou Wei

doi:10.1039/C9TA90145K

Correction: Aliovalent A-site engineered AgNbO₃ lead-free antiferroelectric ceramics toward superior energy storage density

Nengneng Luo,*^af Kai Han,^a Fangping Zhuo,^b Chao Xu,^c Guangzu Zhang,^d Laijun Liu,^e Xiyong Chen,^a Changzheng Hu,^e Huanfu Zhou^e and Yuezhou Wei*^a

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^a Guangxi Key Laboratory of Processing for Non-ferrous Metallic and Featured Materials, School of Resources, Environment and Materials, Guangxi University, Nanning 530004, China
E-mail: luonn1234@163.com, yzwei@gxu.edu.cn

^b Department of Chemistry, Tsinghua University, Beijing 100084, China

^c Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong SAR

^d School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China

^e College of Materials Science and Engineering, Guilin University of Technology, Guilin 541004, China

^f Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning 530004, China

Abstract

Correction for ‘Aliovalent A-site engineered AgNbO₃ lead-free antiferroelectric ceramics toward superior energy storage density’ by Nengneng Luo et al., J. Mater. Chem. A, 2019, DOI: 10.1039/c9ta02053e.

Journal of Materials Chemistry A

Correction: Aliovalent A-site engineered AgNbO₃ lead-free antiferroelectric ceramics toward superior energy storage density

Abstract

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Correction: Aliovalent A-site engineered AgNbO₃ lead-free antiferroelectric ceramics toward superior energy storage density

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