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Issue 45, 2019
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Thin film oxide-ion conducting electrolyte for near room temperature applications

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Abstract

Stabilized bismuth vanadate thin films are presented here as superior oxide ionic conductors, for application in solid state electrochemical devices operating near room temperature. Widely studied in the 90s in bulk form due to their unbeatable ionic conduction, this family of materials was finally discarded due to poor stability above 500 °C. Here, we however unveil the possibility of using Bi4V1.8Cu0.2O10.7 at reduced temperatures in thin film-based devices, where the material keeps its unmatched conduction properties and at the same time shows good stability over a wide oxygen partial pressure range.

Graphical abstract: Thin film oxide-ion conducting electrolyte for near room temperature applications

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Supplementary files

Article information


Submitted
15 Jul 2019
Accepted
09 Sep 2019
First published
13 Sep 2019

This article is Open Access

J. Mater. Chem. A, 2019,7, 25772-25778
Article type
Communication

Thin film oxide-ion conducting electrolyte for near room temperature applications

I. Garbayo, F. Chiabrera, N. Alayo, J. Santiso, A. Morata and A. Tarancón, J. Mater. Chem. A, 2019, 7, 25772
DOI: 10.1039/C9TA07632H

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