Jump to main content
Jump to site search

Issue 22, 2015
Previous Article Next Article

Enhancement of thermoelectric performance of β-Zn4Sb3 through resonant distortion of electronic density of states doped with Gd

Author affiliations

Abstract

The thermoelectric properties of Gd-doped β-Zn4Sb3 are investigated. The results indicate that Gd-doping not only causes a 41 μV K−1 increase in thermopower owing to resonant distortion of DOS but also results in ∼15% reduction in thermal conductivity at a doping content of 0.2%. Consequently, a largest value of ZT = 1.2 is achieved at 655 K.

Graphical abstract: Enhancement of thermoelectric performance of β-Zn4Sb3 through resonant distortion of electronic density of states doped with Gd

Back to tab navigation

Supplementary files

Article information


Submitted
10 Mar 2015
Accepted
25 Apr 2015
First published
30 Apr 2015

J. Mater. Chem. A, 2015,3, 11768-11772
Article type
Communication
Author version available

Enhancement of thermoelectric performance of β-Zn4Sb3 through resonant distortion of electronic density of states doped with Gd

B. Ren, M. Liu, X. Li, X. Qin, D. Li, T. Zou, G. Sun, Y. Li, H. Xin and J. Zhang, J. Mater. Chem. A, 2015, 3, 11768
DOI: 10.1039/C5TA01778E

Social activity

Search articles by author

Spotlight

Advertisements