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Issue 23, 2011
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Polymer bilayer films with semi-interpenetrating semiconducting/insulating microstructure for field-effect transistor applications

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Abstract

We report an unexpected improvement in the microstructural and electrical properties of regioregular poly(3-hexylthiophene) (P3HT) as an active layer in field-effect transistors (FETs) by introducing soft insulating chains from poly(methyl methacrylate) (PMMA) as a cover layer in a solvent mode-dependent manner. A joint experimental and theoretical spectroscopic and electrical analysis is provided to study the P3HT/PMMA bilayer films with semi-interpenetrating semiconducting/insulating interlocked interdiffusion microstructures. Absorption and Raman studies reveal that disordered P3HT chains in films cast from a low-boiling point (bp) solvent favor reorganization into more ordered structures during PMMA covering, thus enhancing the electrical and switch behaviors of FETs. Although high-bp solvents initially create highly crystalline P3HT films, the films are significantly destroyed after the deposition of the PMMA layer, thus dramatically degrading FET characteristics. The semi-interpenetrating semiconducting/insulating microstructures in the designed bilayer films indicate the possibility of ameliorating field-effects in polymer FETs, especially in subthreshold swing and switch on–off behaviors.

Graphical abstract: Polymer bilayer films with semi-interpenetrating semiconducting/insulating microstructure for field-effect transistor applications

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Supplementary files

Article information


Submitted
08 Jul 2011
Accepted
21 Sep 2011
First published
17 Oct 2011

Soft Matter, 2011,7, 11103-11110
Article type
Paper

Polymer bilayer films with semi-interpenetrating semiconducting/insulating microstructure for field-effect transistor applications

F. Wu, H. Cheng, Y. Chen, M. Jang and W. Chou, Soft Matter, 2011, 7, 11103
DOI: 10.1039/C1SM06289A

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