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Issue 2, 2015
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Tuning of resistive memory switching in electropolymerized metallopolymeric films

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Abstract

A diruthenium complex capped with two triphenylamine units was polymerized by electrochemical oxidation to afford metallopolymeric films with alternating diruthenium and tetraphenylbenzidine structures. The obtained thin films feature rich redox processes associated with the reduction of the bridging ligands (tetra(pyrid-2-yl)pyrazine) and the oxidation of the tetraphenylbenzidine and diruthenium segments. The sandwiched ITO/polymer film/Al electrical devices show excellent resistive memory switching with a low operational voltage, large ON/OFF current ratio (100–1000), good stability (500 cycles tested), and long retention time. In stark contrast, devices with polymeric films of a related monoruthenium complex show poor memory performance. The mechanism of the field-induced conductivity of the diruthenium polymer film is rationalized by the formation of a charge transfer state, as supported by DFT calculations.

Graphical abstract: Tuning of resistive memory switching in electropolymerized metallopolymeric films

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Supplementary files

Article information


Submitted
31 Oct 2014
Accepted
24 Nov 2014
First published
24 Nov 2014

This article is Open Access
All publication charges for this article have been paid for by the Royal Society of Chemistry

Chem. Sci., 2015,6, 1308-1315
Article type
Edge Article

Tuning of resistive memory switching in electropolymerized metallopolymeric films

B. Cui, Z. Mao, Y. Chen, Y. Zhong, G. Yu, C. Zhan and J. Yao, Chem. Sci., 2015, 6, 1308
DOI: 10.1039/C4SC03345K

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