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Issue 66, 2019
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Double cascade dressed MOSFET from doped Eu3+and Pr3+ in a host YPO4

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Abstract

In this paper, we study double cascade dressed optical metal oxide semiconductor field-effect transistor (MOSFET) by exploiting enhancement and suppression for mixed-phase (hexagonal + tetragonal) of Eu3+:YPO4 and different phases (hexagonal + tetragonal and pure tetragonal) of Pr3+:YPO4 crystals. We report variation of fine structure energy levels in different doped ions (Eu3+ and Pr3+) in the host YPO crystal. We compared multi-level energy transition from a single dressing laser with single level energy transition from double cascade dressing lasers. Gate delay facilitates multi-energy level dressed transition and is modeled through a Hamiltonian. Based on the results of double cascade dressing, we have realized MOSFET for logic gates (inverter and logic not and gate) with a switching contrast of about 92% using a mixed phase of Pr3+:YPO4.

Graphical abstract: Double cascade dressed MOSFET from doped Eu3+and Pr3+ in a host YPO4

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Article information


Submitted
18 Oct 2019
Accepted
20 Nov 2019
First published
27 Nov 2019

This article is Open Access

RSC Adv., 2019,9, 38828-38833
Article type
Paper

Double cascade dressed MOSFET from doped Eu3+and Pr3+ in a host YPO4

H. Fan, A. Imran, F. Raza, I. ahmed, K. Amjad, P. Li and Y. Zhang, RSC Adv., 2019, 9, 38828
DOI: 10.1039/C9RA08550E

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