Issue 36, 2019, Issue in Progress

Deposition of zinc oxide as an electron transport layer in planar perovskite solar cells by spray and SILAR methods comparable with spin coating

Abstract

CH3NH3PbI3 planar-structure perovskite solar cells were fabricated with the configuration FTO/ZnO/CH3NH3PbI3/Au. ZnO nanoparticles were synthesized by the precipitation method. Three different deposition methods including spin-coating, spraying and successive ionic layer adsorption and reaction (SILAR) were applied to fabricate the ZnO films as electron transport layers. Certain analyses, such as XRD, SEM, FESEM, UV-visible and IV measurements, were carried out to evaluate the performance of the cells. The best cell performance was achieved for the perovskite solar cell with a ZnO film coated by the spin method. The average efficiency was 7% without using any hole transport materials and 10.25% using spiro-OMeTAD as a hole transport material. The average efficiencies of the cells coated by the spraying and SILAR methods using spiro-OMeTAD, were found to be 8.64% and 7.7% respectively. This study demonstrates the versatility of the spray and SILAR coating methods and their potential for fabricating low-cost, large scale, flexible and mass produced perovskite solar cells.

Graphical abstract: Deposition of zinc oxide as an electron transport layer in planar perovskite solar cells by spray and SILAR methods comparable with spin coating

Supplementary files

Article information

Article type
Paper
Submitted
11 Mar 2019
Accepted
24 Jun 2019
First published
04 Jul 2019
This article is Open Access
Creative Commons BY license

RSC Adv., 2019,9, 20917-20924

Deposition of zinc oxide as an electron transport layer in planar perovskite solar cells by spray and SILAR methods comparable with spin coating

M. Dehghan and A. Behjat, RSC Adv., 2019, 9, 20917 DOI: 10.1039/C9RA01839E

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

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