Issue 50, 2018

Microscopic investigations of switching phenomenon in memristive systems: a mini review

Abstract

Resistive switching memories have been regarded as one of the most up and coming memory systems and researchers have shown great interest in them because of their simple structure, high speed and low fabrication cost. These memory systems also have great potential for scaling, however, this has been difficult to achieve without detailed understanding of underlying switching mechanisms. Meanwhile, scaling down could also raise reliability concerns in its performance. This work provides an overview of various switching mechanisms and their investigations at nanoscale levels using high resolution microscopy techniques. In this mini review, the main focus was to understand the working mechanism derived from the so-called filament model. The high resolution conductive atomic force microscope, transmission electron microscope and scanning electron microscopes are the best tools available to investigate the dynamics of filamentary switching. Several issues with the existing techniques are also highlighted.

Graphical abstract: Microscopic investigations of switching phenomenon in memristive systems: a mini review

Article information

Article type
Review Article
Submitted
22 Jun 2018
Accepted
24 Jul 2018
First published
13 Aug 2018
This article is Open Access
Creative Commons BY-NC license

RSC Adv., 2018,8, 28763-28774

Microscopic investigations of switching phenomenon in memristive systems: a mini review

A. Younis and S. Li, RSC Adv., 2018, 8, 28763 DOI: 10.1039/C8RA05340E

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