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Issue 50, 2018
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Improved electrical transport properties of an n-ZnO nanowire/p-diamond heterojunction

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Abstract

A heterojunction of n-ZnO nanowire (NW)/p-B-doped diamond (BDD) was fabricated. The rectifying behavior was observed with the turn on voltage of a low value (0.8 V). The forward current at 5 V is 12 times higher than that of a larger diameter n-ZnO nanorod (NR)/p-BDD heterojunction. The electrical transport behaviors for the comparison of n-ZnO NWs/p-BDD and n-ZnO NRs/p-BDD heterojunctions are investigated over various bias voltages. The carrier injection process mechanism for ZnO NWs/BDD is analyzed on the basis of the proposed equilibrium energy band diagrams. The ZnO NWs/BDD heterojunction displays improved IV characteristics and relatively high performance for the electrical transport properties.

Graphical abstract: Improved electrical transport properties of an n-ZnO nanowire/p-diamond heterojunction

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Publication details

The article was received on 25 Apr 2018, accepted on 08 Aug 2018 and first published on 13 Aug 2018


Article type: Paper
DOI: 10.1039/C8RA03546F
RSC Adv., 2018,8, 28804-28809
  • Open access: Creative Commons BY license
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    Improved electrical transport properties of an n-ZnO nanowire/p-diamond heterojunction

    D. Sang, Q. Wang, Q. Wang, D. Zhang, H. Hu, W. Wang, B. Zhang, Q. Fan and H. Li, RSC Adv., 2018, 8, 28804
    DOI: 10.1039/C8RA03546F

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