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Issue 34, 2018, Issue in Progress
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Growth promotion of vertical graphene on SiO2/Si by Ar plasma process in plasma-enhanced chemical vapor deposition

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Abstract

This study investigates the growth promotion of vertically oriented graphene in plasma-enhanced chemical vapor deposition through Ar plasma treatment. Combined with various substrate treatments, including hydrofluoric acid etching and oxidation after Ar plasma treatment, Ar plasma pretreatment promotes vertical growth through the microcavity on the rough substrate surface and the active growth sites. The microcavity affects the strain distribution and defects of as-deposited planar films, which benefit the transition of 2D deposition to 3D vertical growth. A growth model on the effect of Ar plasma pretreatment is proposed.

Graphical abstract: Growth promotion of vertical graphene on SiO2/Si by Ar plasma process in plasma-enhanced chemical vapor deposition

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Supplementary files

Article information


Submitted
29 Jan 2018
Accepted
28 Mar 2018
First published
22 May 2018

This article is Open Access

RSC Adv., 2018,8, 18757-18761
Article type
Paper

Growth promotion of vertical graphene on SiO2/Si by Ar plasma process in plasma-enhanced chemical vapor deposition

Y. Sui, Z. Chen, Y. Zhang, S. Hu, Y. Liang, X. Ge, J. Li, G. Yu, S. Peng, Z. Jin and X. Liu, RSC Adv., 2018, 8, 18757
DOI: 10.1039/C8RA00869H

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    [Original citation] - Published by The Royal Society of Chemistry.

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