Issue 75, 2017, Issue in Progress

Tuning the transport and magnetism in a Cr–Bi2Se3 topological insulator by Sb doping

Abstract

High-quality crystalline (Cr,Sb)-doped Bi2Se3 (Cr-BSS) films were synthesized using molecular beam epitaxy (MBE). The effect of Cr- and Sb-doping on the transport and magnetic properties of Cr-BSS films was systematically investigated. The sheet carrier density N2D was found to be reduced to ∼6 × 1012 cm−2 in this quaternary compound at room temperature. This has not previously been observed in a Cr–Bi2Se3-based magnetic topological insulator (TI). Moreover, owing to the Sb dopants, the weak localization (WL)-like positive magnetoconductance in magnetic Cr–Bi2Se3 (Cr-BS) was enhanced. The enhancement is attributed to the emergence of ferromagnetism, as evidenced from the field-dependent Hall resistance and magnetic moment. The obvious tunable electrical and magnetic properties by the Sb dopant in this system are well suited for applications based on magnetic TI devices.

Graphical abstract: Tuning the transport and magnetism in a Cr–Bi2Se3 topological insulator by Sb doping

Supplementary files

Article information

Article type
Paper
Submitted
25 Jul 2017
Accepted
02 Oct 2017
First published
11 Oct 2017
This article is Open Access
Creative Commons BY license

RSC Adv., 2017,7, 47789-47795

Tuning the transport and magnetism in a Cr–Bi2Se3 topological insulator by Sb doping

Y. Tung, C. W. Chong, C. W. Liao, C. H. Chang, S. Y. Huang, P. Y. Chuang, M. K. Lee, C. M. Cheng, Y. C. Li, C. P. Liu and J. C. A. Huang, RSC Adv., 2017, 7, 47789 DOI: 10.1039/C7RA08201K

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