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Issue 14, 2017, Issue in Progress
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ALD preparation of high-k HfO2 thin films with enhanced energy density and efficient electrostatic energy storage

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Abstract

High-k dielectric HfO2 thin films with a predominant monoclinic phase were prepared by atomic layer deposition (ALD). The annealed HfO2 films exhibited a large dielectric constant, of up to εr = 26 with a high breakdown field of over 4000 kV cm−1. The best performance with a maximum recoverable energy density of 21.3 J cm−3 and energy efficiency of 75% was obtained with the 63 nm HfO2 films. In addition, a well-defined temperature dependence of the energy storage properties from room temperature to 150 °C was demonstrated, indicating a stable energy density variation between 11.0 and 13.0 J cm−3 with a high energy efficiency of about 80%. These achievements provide a platform for synthesizing high-k dielectric thin films with enhanced energy densities and efficiencies.

Graphical abstract: ALD preparation of high-k HfO2 thin films with enhanced energy density and efficient electrostatic energy storage

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Supplementary files

Article information


Submitted
06 Dec 2016
Accepted
28 Dec 2016
First published
26 Jan 2017

This article is Open Access

RSC Adv., 2017,7, 8388-8393
Article type
Paper

ALD preparation of high-k HfO2 thin films with enhanced energy density and efficient electrostatic energy storage

L. Zhang, M. Liu, W. Ren, Z. Zhou, G. Dong, Y. Zhang, B. Peng, X. Hao, C. Wang, Z. Jiang, W. Jing and Z. Ye, RSC Adv., 2017, 7, 8388
DOI: 10.1039/C6RA27847G

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