Issue 100, 2016, Issue in Progress

Gate voltage-dependent magnetoresistance of Zn0.8Co0.2O:H

Abstract

The magnetoresistance of a hydrogenated Zn0.8Co0.2O film with an inverted thin film transistor structure was measured at 7 K, in magnetic fields up to 3 T in order to verify the magnetoresistance dependency on carrier density. The gate voltage-dependent magnetoresistance was measured between −15 V and 15 V. A large positive magnetoresistance was identified at all gate biases. Changes in positive gate voltage did not result in significant changes in the magnetoresistance; however, an increase in negative gate voltage resulted in an increase in magnetoresistance and zero field resistivity. The magnetoresistance comprises a positive component, as a result of quantum conductivity correction due to the s–d exchange interaction, and a negative component induced by weak localization. The gate voltage-dependence of the positive and negative magnetoresistances was described by the density of states for ZnCoO:H.

Graphical abstract: Gate voltage-dependent magnetoresistance of Zn0.8Co0.2O:H

Article information

Article type
Paper
Submitted
18 Aug 2016
Accepted
29 Sep 2016
First published
05 Oct 2016

RSC Adv., 2016,6, 97555-97559

Gate voltage-dependent magnetoresistance of Zn0.8Co0.2O:H

M. Cheon, Y. C. Cho, C. Cho, C. H. Park and S. Jeong, RSC Adv., 2016, 6, 97555 DOI: 10.1039/C6RA20787A

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