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Issue 11, 2016
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Band modification of graphene by using slow Cs+ ions

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Abstract

We report new wide band gap engineering for graphene using slow Cs+ ions, which allows both fine-tuning and on–off switching capability of the band gap in a range suitable for most applications without modifying or deteriorating the relativistic nature of the Dirac fermions. The doping of Cs+ ions opens the band gap up to Eg = 0.68 eV, which can be closed completely by adding neutral Cs atoms, as observed in angle-resolved photoemission spectroscopy. The operating mechanism of this band gap engineering is understood by a simple capacitor model, which is fully supported by the density-functional theory calculations.

Graphical abstract: Band modification of graphene by using slow Cs+ ions

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Publication details

The article was received on 19 Nov 2015, accepted on 28 Dec 2015 and first published on 06 Jan 2016


Article type: Paper
DOI: 10.1039/C5RA24482J
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RSC Adv., 2016,6, 9106-9111

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    Band modification of graphene by using slow Cs+ ions

    S. Sung, S. Lee, P. Lee, J. Kim, H. Park, M. Ryu, N. Kim, C. Hwang, S. Jhi and J. Chung, RSC Adv., 2016, 6, 9106
    DOI: 10.1039/C5RA24482J

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