Enhancement of light emission in GaAs epilayers with graphene quantum dots

T. N. Lin; K. H. Chih; M. C. Cheng; C. T. Yuan; C. L. Hsu; J. L. Shen; J. L. Hou; C. H. Wu; W. C. Chou; T. Y. Lin

doi:10.1039/C5RA09315E

Enhancement of light emission in GaAs epilayers with graphene quantum dots

T. N. Lin,^a K. H. Chih,^b M. C. Cheng,^a C. T. Yuan,^a C. L. Hsu,^a J. L. Shen,*^a J. L. Hou,^c C. H. Wu,^c W. C. Chou^d and T. Y. Lin^e

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* Corresponding authors

^a Department of Physics and Center for Nanotechnology, Chung Yuan Christian University, Chung-Li 32023, Taiwan
E-mail: jlshen@cycu.edu.tw

^b Master Program in Nanotechnology at CYCU, Chung Yuan Christian University, Chung-Li, Taiwan

^c Institute of Nuclear Energy Research, P. O. Box 3-11, Lung-Tan 32500, Taiwan

^d Electrophysics Department, National Chiao-Tung University, Hsin-Chu, Taiwan

^e Institute of Optoelectronic Sciences, National Taiwan Ocean University, Keelung, Taiwan

Abstract

A green and one-step synthesis of graphene quantum dots (GQDs) has been implemented using pulsed laser ablation from aqueous graphene. The synthesized GQDs are able to enhance the photoluminescence (PL) of GaAs epilayers after depositing them on the GaAs surface. An enhancement of PL intensity of a factor of 2.8 has been reached at a GQD concentration of 1.12 mg ml⁻¹. On the basis of the PL dynamics, the PL enhancement in GaAs is interpreted by the carrier transfer from GQDs to GaAs due to the work function difference between them.

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Enhancement of light emission in GaAs epilayers with graphene quantum dots

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Enhancement of light emission in GaAs epilayers with graphene quantum dots

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