Issue 64, 2015

The effect of perpendicular electric field on temperature-induced plasmon excitations for intrinsic silicene

Abstract

We use the tight-binding model and the random-phase approximation to investigate the intrinsic plasmon in silicene. At finite temperatures, an undamped plasmon is generated from the interplay between the intraband and the interband-gap transitions. The extent of the plasmon existence range in terms of momentum and temperature, which is dependent on the size of the single-particle-excitation gap, is further tuned by applying a perpendicular electric field. The plasmon becomes damped in the interband-excitation region. A low damped zone is created by the field-induced spin split. The field-dependent plasmon spectrum shows a strong tunability in the plasmon intensity and spectral bandwidth. This could make silicene a very suitable candidate for plasmonic applications.

Graphical abstract: The effect of perpendicular electric field on temperature-induced plasmon excitations for intrinsic silicene

Article information

Article type
Paper
Submitted
29 Apr 2015
Accepted
28 May 2015
First published
28 May 2015

RSC Adv., 2015,5, 51912-51918

Author version available

The effect of perpendicular electric field on temperature-induced plasmon excitations for intrinsic silicene

J. Wu, C. Lin, G. Gumbs and M. Lin, RSC Adv., 2015, 5, 51912 DOI: 10.1039/C5RA07721D

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