Low-temperature fabrication of high performance indium oxide thin film transistors

Abstract

In this study, indium oxide (In₂O₃) thin-film transistors (TFTs) were fabricated by a solution-process at low temperature. A single precursor in a single solvent system was used as the In₂O₃ precursor to minimize the carbon-based impurities. The 300 °C-annealed In₂O₃ TFT with channel thickness of 12 nm exhibits enhanced performance, which shows saturation mobility (μ_sat) of 3.08 cm² V⁻¹ s⁻¹, an on/off current ratio (I_on/I_off) of 1.04 × 10⁸, a threshold voltage (V_T) of 12.7 V, and a subthreshold swing (SS) of 1.49 V per decade. Finally, high-performance In₂O₃ TFT based on solution-processed zirconium oxide dielectric was realized, which shows distinguished electrical performance (μ_sat = 13.01 cm² V⁻¹ s⁻¹, I_on/I_off = 1.09 × 10⁷, V_T = 1.2 V, and SS = 0.1 V per decade). These results suggest that solution-processed In₂O₃ TFTs could potentially be used for low-cost, low-temperature, and high-performance electronic devices.