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Issue 47, 2015
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Low-temperature fabrication of high performance indium oxide thin film transistors

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Abstract

In this study, indium oxide (In2O3) thin-film transistors (TFTs) were fabricated by a solution-process at low temperature. A single precursor in a single solvent system was used as the In2O3 precursor to minimize the carbon-based impurities. The 300 °C-annealed In2O3 TFT with channel thickness of 12 nm exhibits enhanced performance, which shows saturation mobility (μsat) of 3.08 cm2 V−1 s−1, an on/off current ratio (Ion/Ioff) of 1.04 × 108, a threshold voltage (VT) of 12.7 V, and a subthreshold swing (SS) of 1.49 V per decade. Finally, high-performance In2O3 TFT based on solution-processed zirconium oxide dielectric was realized, which shows distinguished electrical performance (μsat = 13.01 cm2 V−1 s−1, Ion/Ioff = 1.09 × 107, VT = 1.2 V, and SS = 0.1 V per decade). These results suggest that solution-processed In2O3 TFTs could potentially be used for low-cost, low-temperature, and high-performance electronic devices.

Graphical abstract: Low-temperature fabrication of high performance indium oxide thin film transistors

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Article information


Submitted
09 Mar 2015
Accepted
20 Apr 2015
First published
20 Apr 2015

RSC Adv., 2015,5, 37807-37813
Article type
Paper
Author version available

Low-temperature fabrication of high performance indium oxide thin film transistors

Y. Meng, G. Liu, A. Liu, H. Song, Y. Hou, B. Shin and F. Shan, RSC Adv., 2015, 5, 37807
DOI: 10.1039/C5RA04145G

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