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Issue 56, 2015
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Contactless bottom-up electrodeposition of nickel for 3D integrated circuits

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Abstract

Packaging applications in the semiconductor industry rely on electrodepositing metals into high aspect ratio (HAR) vias without the formation of any defects or voids. The process and economic efficiency of conventional methodologies are limited by the ability to achieve high deposition rates along with uniformity of the deposited metal layer. In this work, a contactless and scalable electrodeposition technique has been developed to deposit metallic nickel onto p-doped silicon wafers. The effect of various process variables such as deposition and etchant solution composition and concentration, solution temperature and stirring on nickel deposition rates have been investigated. The importance of backside silicon oxidation and subsequent oxide etching on the kinetics of nickel deposition on frontside silicon has been highlighted.

Graphical abstract: Contactless bottom-up electrodeposition of nickel for 3D integrated circuits

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Article information


Submitted
02 Mar 2015
Accepted
12 May 2015
First published
12 May 2015

This article is Open Access

RSC Adv., 2015,5, 45291-45299
Article type
Paper
Author version available

Contactless bottom-up electrodeposition of nickel for 3D integrated circuits

M. Zhao, R. Balachandran, Z. Patterson, R. Gouk, S. Verhaverbeke, F. Shadman and M. Keswani, RSC Adv., 2015, 5, 45291
DOI: 10.1039/C5RA03683F

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