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Issue 4, 2015
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Enhanced electron field emission properties from hybrid nanostructures of graphene/Si tip array

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Abstract

Highly efficient with excellent stability electron field emitters based on monolayer graphene coated on well-aligned Si tip (graphene/SiT) arrays fabricated by a simple transfer method are demonstrated. The graphene monolayer is coated on the Si tip array using a chemical vapor deposition process, while the SiTs are prepared through the etching process of a Si substrate. The novel heterostructure field emitter enhanced electron tunneling, as a result, exhibits a better emission property. In addition, the fabricated microplasma devices based on the graphene/SiT heterostructure are closely correlated to the field emission properties of the graphene/SiT materials. The monolayer graphene supported on vertical SiTs provides the protruded nanostructure, which locally enhances the electric field and thus improves the field emission and the plasma illumination characteristics.

Graphical abstract: Enhanced electron field emission properties from hybrid nanostructures of graphene/Si tip array

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Publication details

The article was received on 29 Oct 2014, accepted on 17 Nov 2014 and first published on 02 Dec 2014


Article type: Paper
DOI: 10.1039/C4RA13363C
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RSC Adv., 2015,5, 2928-2933

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    Enhanced electron field emission properties from hybrid nanostructures of graphene/Si tip array

    T. Chang, F. Lu, S. Kunuku, K. Leou, N. Tai and I. Lin, RSC Adv., 2015, 5, 2928
    DOI: 10.1039/C4RA13363C

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