Issue 107, 2014

Tunable dielectric constant of polyimide–barium titanate nanocomposite materials as the gate dielectrics for organic thin film transistor applications

Abstract

We report on a systematic study of hydroxyl-containing polyimide (PI)–BaTiO3 (BT) nanoparticle (NP) nanocomposite dielectric materials, to determine the effects of BT NPs loadings (X) for X = 0, 2, 5, 8, 10, and 12 wt%, on p-type pentacene organic thin film transistors (OTFTs). A condensation reaction to produce well-dispersed BT NPs within the PI matrix was followed by spin-coating to form a dielectric thin film directly on a silicon substrate. The thermal, optical, surface, dielectric, and electrical properties of the PI–BPX hybrid dielectric composite correlated to BT content for each sample. The hybrid dielectric composites exhibit tunable insulating properties, including high dielectric constant values in the range 5.2–11.3, high capacitances from 3.1 to 27.9 nF cm−2 for a film thickness of approximately 350 nm, and low leakage current densities in the range of 1.85 × 10−7 to 2.76 × 10−6 A cm−2 at 2 MV cm−1. Bottom-gate top-contact OTFTs fabricated using various PI–BTX hybrid dielectrics, exhibit low threshold voltages of −4.09–2.62 V, moderately high field-effect mobility rates of 3.36 × 10−2∼2.32 × 10−1 cm2 V−1 s−1, and high ON/OFF ratios of approximately 105. This study opens a route towards transparent and highly stable hybrid dielectric materials with tunable dielectric properties, by careful selection of NPs and polymer matrix combinations.

Graphical abstract: Tunable dielectric constant of polyimide–barium titanate nanocomposite materials as the gate dielectrics for organic thin film transistor applications

Supplementary files

Article information

Article type
Paper
Submitted
15 Aug 2014
Accepted
12 Nov 2014
First published
12 Nov 2014

RSC Adv., 2014,4, 62132-62139

Author version available

Tunable dielectric constant of polyimide–barium titanate nanocomposite materials as the gate dielectrics for organic thin film transistor applications

Y. Yu, C. Liu, Y. Chen, Y. Chiu and W. Chen, RSC Adv., 2014, 4, 62132 DOI: 10.1039/C4RA08694E

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