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Issue 86, 2014
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Modification of a polymer gate insulator by zirconium oxide doping for low temperature, high performance indium zinc oxide transistors

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Abstract

Indium zinc oxide (IZO) thin film transistors (TFTs) with poly(4-vinylphenol-co-methylmethacrylate) (PVP-co-PMMA) gate insulators were fabricated at a low temperature (250 °C). The bottom gate IZO TFTs with a PVP-co-PMMA gate electric film exhibited inferior device performance to the top gate IZO TFTs, which was attributed to sputtering damage of the underlying polymer gate dielectric film during IZO channel formation. The charge carrier transport and interface properties of the IZO TFTs could be further improved by introducing a ZrO2 precursor to the polymer gate insulator. The ZrO2 molecules were well dispersed in the polymer film. The resulting hybrid dielectric film showed a higher capacitance and a smoother morphology than the PVP-co-PMMA dielectric film. The hybrid dielectric-gated IZO TFT had a high mobility of 28.4 cm2 V−1 s−1, low subthreshold gate swing of 0.70 V per decade, and a high Ion/off ratio of 4.0 × 107.

Graphical abstract: Modification of a polymer gate insulator by zirconium oxide doping for low temperature, high performance indium zinc oxide transistors

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Supplementary files

Article information


Submitted
12 Aug 2014
Accepted
05 Sep 2014
First published
05 Sep 2014

RSC Adv., 2014,4, 45742-45748
Article type
Paper

Modification of a polymer gate insulator by zirconium oxide doping for low temperature, high performance indium zinc oxide transistors

B. Son, S. Y. Je, H. J. Kim and J. K. Jeong, RSC Adv., 2014, 4, 45742
DOI: 10.1039/C4RA08548E

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