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Issue 56, 2014
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Control of active semiconducting layer packing in organic thin film transistors through synthetic tailoring of dielectric materials

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Abstract

Apart from the development of new dielectric and semiconductor materials, the semiconductor–dielectric interface study is also very important for the optimum performance of organic thin film transistors (OTFTs). Herein, we have reported the detailed synthesis of a whole new family of dielectric materials which are 1,3,5,7-tetrabromoadamantane; 1,3,5,7-tetrachloroadamanatane; 1,3,5,7-tetraiodoadamantane and 1,3,5,7-tetrauraciladamantane (AdUr4). The unique ability of these molecules to undergo supramolecular thin film formation at low temperature, was analysed for their potential use as an insulator in organic electronic devices. Owing to the good leakage current density property shown by AdUr4 dielectric material it was further employed as a gate dielectric in regioregular poly(3-hexylthiophene), (P3HT) based OTFT. This OTFT device which was fabricated on a flexible PI plastic substrate has shown a good on/off current ratio (e.g., 2.18 × 104) and high mobility (e.g., 0.15 cm2 V−1 s−1). The semiconductor–dielectric interface study, has revealed that the AdUr4 gate dielectric layer has guided the P3HT molecular chain domains to undergo edge-on orientation, which is the charge transport direction in OTFTs. In this process, the grazing incidence X-ray diffraction (GI-XRD) analysis and AFM study was also employed.

Graphical abstract: Control of active semiconducting layer packing in organic thin film transistors through synthetic tailoring of dielectric materials

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Publication details

The article was received on 10 Mar 2014, accepted on 19 Jun 2014 and first published on 20 Jun 2014


Article type: Paper
DOI: 10.1039/C4RA02077D
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Citation: RSC Adv., 2014,4, 29383-29392

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    Control of active semiconducting layer packing in organic thin film transistors through synthetic tailoring of dielectric materials

    R. Singh, J. S. Meena, Y. Chang, C. Wu and F. Ko, RSC Adv., 2014, 4, 29383
    DOI: 10.1039/C4RA02077D

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