Jump to main content
Jump to site search

Issue 18, 2014
Previous Article Next Article

The effect of the stacking fault on the diffusion of chemisorbed hydrogen atoms inside few-layered graphene

Author affiliations

Abstract

We examined the diffusion of hydrogen atoms in mono-, bi- and tetralayer graphene with AB stacking and two bilayer graphene with stacking faults using density functional theory. The bi- and tetralayer graphene provide diffusion pathways with lower energy barriers inside the interlayer space. Inside the bi- and tetralayer graphene with AB stacking, the in-plane diffusion is more favorable than the inter-plane jumping. However, the stacking faults made by sliding layer planes lowers the energy barrier of the inter-plane jumping and the effective frequency of the inter-plane jump is larger than that of the in-plane diffusion inside the graphene layers with the stacking faults. This suggests that hydrogen atoms can diffuse over a long distance inside few-layered graphene with stacking faults jumping consecutively between adjacent layers.

Graphical abstract: The effect of the stacking fault on the diffusion of chemisorbed hydrogen atoms inside few-layered graphene

Back to tab navigation

Supplementary files

Article information


Submitted
13 Nov 2013
Accepted
09 Dec 2013
First published
11 Dec 2013

RSC Adv., 2014,4, 9223-9228
Article type
Paper

The effect of the stacking fault on the diffusion of chemisorbed hydrogen atoms inside few-layered graphene

D. H. Chung, H. Guk, D. Kim, S. S. Han, N. Park, K. Choi and S. Choi, RSC Adv., 2014, 4, 9223
DOI: 10.1039/C3RA46626D

Social activity

Search articles by author

Spotlight

Advertisements