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Issue 9, 2014
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Fabrication of c-Si solar cells using boric acid as a spin-on dopant for back surface field

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Abstract

Cost effective solar cells are paramount for solar power to compete with traditional power generation. Here we present results on two low cost, both side textured c-Si solar cells. One solar cell had an Al back surface field (BSF), while the other had boron BSF fabricated by using spin-on boric acid as a p-type dopant. As compared to the Al-BSF solar cell, an improvement in efficiency of 1.7% was observed for a solar cell with boron BSF. Since boron BSF is stronger than Al-BSF, an improvement in efficiency can be attributed to an increase in long wavelength response, collection efficiency and reduced back surface recombination. The boron BSF solar cell showed an efficiency of 12.9% with Voc of 0.56 V, Jsc of 32.2 mA cm−2 and FF of 0.72. These parameters are expected to significantly increase further with the addition of layers such as anti-reflection/passivation layers at the front side, and back surface passivation with local back surface field, etc.

Graphical abstract: Fabrication of c-Si solar cells using boric acid as a spin-on dopant for back surface field

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Article information


Submitted
11 Oct 2013
Accepted
05 Nov 2013
First published
08 Nov 2013

RSC Adv., 2014,4, 4225-4229
Article type
Paper

Fabrication of c-Si solar cells using boric acid as a spin-on dopant for back surface field

G. Singh, A. Verma and R. Jeyakumar, RSC Adv., 2014, 4, 4225
DOI: 10.1039/C3RA45746J

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