Issue 7, 2014
From the journal:

RSC Advances

Water assisted oxygen absorption on the instability of amorphous InAlZnO thin-film transistors

Jie Zhang,ab   Xifeng Li,c   Jianguo Lu,*ac   Nanjia Zhou,b   Peijun Guo,b   Bin Lu,a   Xinhua Pan,a   Linxiang Chena  and  Zhizhen Ye*a  

* Corresponding authors

a State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China
E-mail: lujianguo@zju.edu.cn, yezz@zju.edu.cn

b Department of Materials Science and Engineering and the Materials Research Center, Northwestern University, 2220 Campus Drive, Evanston, IL 60208, USA

c Key Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, Shanghai 200072, People's Republic of China

Abstract

Stability of amorphous InAlZnO thin-film transistors was investigated under vacuum conditions and an oxygen atmosphere with different rates of relative humidity. The mechanism of water assisted oxygen absorption on the back channel is proposed to explain the phenomenon that wet oxygen leads to a larger positive threshold voltage (Vth) shift than dry oxygen.

Graphical abstract: Water assisted oxygen absorption on the instability of amorphous InAlZnO thin-film transistors

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Article information

DOI
https://doi.org/10.1039/C3RA44513E
Article type
Communication
Submitted
20 Aug 2013
Accepted
22 Oct 2013
First published
23 Oct 2013

RSC Adv., 2014,4, 3145-3148

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Water assisted oxygen absorption on the instability of amorphous InAlZnO thin-film transistors

J. Zhang, X. Li, J. Lu, N. Zhou, P. Guo, B. Lu, X. Pan, L. Chen and Z. Ye, RSC Adv., 2014, 4, 3145 DOI: 10.1039/C3RA44513E

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