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Issue 7, 2018
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Pressure-induced electrical transport properties, texture, and microstructure of the (Bi,Sb)2Te3 alloys

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Abstract

High pressure as an effective strategy was employed to synthesize and modulate the electrical transport properties of (Bi,Sb)2Te3 alloys. Intrinsic point defects could be significantly regulated via high pressure, inducing a suitable donor-like effect to optimize the carrier concentration. The texture and microstructure were improved with high pressure, and a nanograin with (00l) orientation was observed in the (Bi,Sb)2Te3 matrix, suggesting that high pressure could facilitate the recrystallization of lattice defects along the (00l) orientation. Based on the synergistic effect of high pressure on intrinsic point defects, texture, and microstructure, the carrier concentration and mobility are regularly modulated, resulting in the room-temperature power factor of the (Bi,Sb)2Te3 alloys exhibiting a strong correlation with pressure. Hence, these important results here provide a prospective strategy in the improvement in the electrical transport properties of the Bi2Te3-based alloys according to the rational design of intrinsic point defects, texture, and microstructure with high pressure.

Graphical abstract: Pressure-induced electrical transport properties, texture, and microstructure of the (Bi,Sb)2Te3 alloys

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Publication details

The article was received on 30 Mar 2018, accepted on 28 Apr 2018 and first published on 03 May 2018


Article type: Research Article
DOI: 10.1039/C8QI00288F
Citation: Inorg. Chem. Front., 2018,5, 1540-1544

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    Pressure-induced electrical transport properties, texture, and microstructure of the (Bi,Sb)2Te3 alloys

    X. Guo, J. Qin, X. Jia and D. Jiang, Inorg. Chem. Front., 2018, 5, 1540
    DOI: 10.1039/C8QI00288F

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