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Issue 6, 2021
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Few-layer In4/3P2Se6 nanoflakes for high detectivity photodetectors

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Abstract

Metal phosphorus trichalcogenides (MPX3) have attracted extensive attention as promising two-dimensional (2D) layered materials in future electronic and optoelectronic devices. Here, for the first time, few-layer In4/3P2Se6 nanoflakes have been successfully exfoliated from home-made high-quality single crystals. The In4/3P2Se6 crystal belongs to the R3 space group, and possesses a weak van der Waals force between the adjacent layers and a direct bandgap of 1.99 eV. Furthermore, the In4/3P2Se6-based photodetectors show high performances in the visible light region, such as a high responsivity (R) of 4.93 A·W−1, a high external quantum efficiency (EQE) of 1509% and a fast response time, as low as 2.1 ms. In particular, the high detectivity (D) of the devices can reach up to 4.3 × 1013 Jones (light ON/OFF ratio ≈104) under illumination from a 405 nm light at a bias voltage of 1 V, which is favoured by the ultralow dark current (∼100 fA). These excellent performances pave the way for the implementation of In4/3P2Se6 nanoflakes as promising candidates for future optoelectronic detection applications.

Graphical abstract: Few-layer In4/3P2Se6 nanoflakes for high detectivity photodetectors

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Article information


Submitted
09 Nov 2020
Accepted
16 Jan 2021
First published
18 Jan 2021

Nanoscale, 2021,13, 3757-3766
Article type
Paper

Few-layer In4/3P2Se6 nanoflakes for high detectivity photodetectors

H. Zhao, Y. Yan, X. Song, Z. Ma, T. Tian, Y. Jiang, X. Li, C. Xia and J. Li, Nanoscale, 2021, 13, 3757
DOI: 10.1039/D0NR07987A

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