Issue 44, 2020

Ferroelectricity and phase transitions in In2Se3 van der Waals material

Abstract

van der Waals layered α-In2Se3 has shown out-of-plane ferroelectricity down to the bilayer and monolayer thicknesses at room temperature that can be switched by an applied electric field. This work addresses the missing theoretical framework through a comprehensive study on the layer-dependent electronic structure, ferroelectricity and the inter-layer interaction of α-In2Se3, by using first-principles density functional theory. Furthermore, surface states and their response to the built-in internal depolarizing field were carefully analyzed. Phase transition and Curie temperatures of 1L α-In2Se3 were studied by employing Monte Carlo and ab initio molecular dynamics simulations. The estimated Curie point is above room temperature, making 1L α-In2Se3 a promising candidate for future ultra-thin ferroelectric devices.

Graphical abstract: Ferroelectricity and phase transitions in In2Se3 van der Waals material

Article information

Article type
Paper
Submitted
28 May 2020
Accepted
13 Oct 2020
First published
15 Oct 2020

Nanoscale, 2020,12, 22688-22697

Ferroelectricity and phase transitions in In2Se3 van der Waals material

M. Soleimani and M. Pourfath, Nanoscale, 2020, 12, 22688 DOI: 10.1039/D0NR04096G

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